ADMV8432 詳細資料

時間：2019-09-11作者：深圳市國宇航芯科技有限公司瀏覽：96

深圳市國宇航芯科技有限公司專注于編程FPGA器件等

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• T1G4020036-FS

  Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is constructed with Qorvo's proven T

• 綿陽QPD1022的詳細信息

  QPD1022DC - 12 GHz, 10 Watt, 32 V GaN RF TransistorKey FeaturesFrequency Range: DC - 12 GHzOutput Power (P3dB): 11.0 W at 2 GHzLinear Gain: 24.0 dB typical at 2 GHzTypical PAE3dB: 68.8 % at 2 GHzOpera

• HMC407的詳細資料

  The HMC407 from Analog Devices is a RF Amplifier with Frequency 5 to 7 GHz, Gain 18 dB, Noise Figure 5.5 dB, P1dB 25 dBm, P1dB 0.316 W. Tags: Surface Mount, Power Amplifier. More details for HMC407 ca

• AM30040031SF-3H

  The AM30040031SF-3H from AMCOM Communications is a RF Amplifier with Frequency 30 to 40 GHz, Small Signal Gain 14 to 20 dB pk-pk, P1dB 24 to 27 dBm, P1dB 0.251 to 0.501 W, Saturated Power 31 dBm. Tags